MemFlash—Floating Gate Transistors as Memristors

Abstract The idea of resistive switching devices is originally based on the fact that application electric fields changes atomic structure locally and thus also electronic material. This leads globally to a sustained change in resistance material layer, which generally referred as switching. In devices, these reconfigurations are reversible allow state be maintained for long time, why memristive (also named Memristor). Memristive can realized two terminal metal-insulator-metal structure. MemFlash cell, there no rearrangement device therefore purely device. basic components cell floating gate transistors, reduced from three-terminal two-terminal by means diode-like wiring scheme exhibit behavior. this book chapter, introduced.